Every optical function on its best platform.
No single material is optimized for every photonic function. NantOptiFab brings together electro-optic, nonlinear, passive, and semiconductor platforms so performance, loss, footprint, and integration can be optimized at the device and circuit level.
Complementary by design
Our multi-platform strategy assigns modulation, nonlinear conversion, optical routing, detection, and dense integration to the materials that perform those jobs best—then joins them through heterogeneous integration.
LN
Lithium Niobate
A versatile optical material with strong electro-optic response, second-order nonlinearity, broad optical transparency, low optical loss, and proven stability.
Process
Cleaning; Ti deposition and diffusion or proton exchange; electrode metallization; dielectric interlayer deposition; annealing; APE and Ti-diffused waveguide formation.
Functions
Straight waveguide, Y-branch, S-bend, taper, passive components, Mach–Zehnder and phase modulation.
Devices
MIOC, IQ modulator, phase modulator, passive waveguide components.
Applications
Fiber-optic gyroscopes, coherent LiDAR, coherent networks, and space laser communication.
ELN™
Enhanced Lithium Niobate
NantOptiFab's enhanced platform uses wafer bonding and precision thinning to improve high-frequency response, RF-to-optical interaction, and optical field coupling while preserving LN's optical strengths.
Process
Wafer preparation, carrier-wafer preparation, surface treatment, bonding, precision thinning, and electrode metallization.
Functions
Improved RF–optical field interaction and enhanced optical-field interaction efficiency.
Devices
Intensity and phase modulators, directional-coupler switches, coherent transmitters, and ELN™–SiN heterogeneous circuits.
Applications
High-speed modulation and heterogeneous integrated photonic circuits.
ELN™ technology patented in 2025 · U.S. Patent No. 12,422,726 B2
PPLN
Periodically Poled Lithium Niobate
Engineered periodic domain inversion produces quasi-phase matching and efficient access to lithium niobate's strong second-order nonlinearity.
Process
Wafer preparation, patterning, high-voltage poling, waveguide formation, and ridge-structure formation.
Functions
Quasi-phase matching and high-efficiency nonlinear optical processing.
Devices
Second-harmonic generation, optical parametric amplification, and spontaneous parametric down-conversion.
Applications
Single-photon sources, squeezed-light generation, wavelength conversion, QKD, and quantum computing.
TFLN
Thin-Film Lithium Niobate
A next-generation photonic-chip platform enabling faster, smaller, and more energy-efficient optical systems for communication, sensing, LiDAR, AI, and quantum applications.
Process
Wafer preparation, patterning, waveguide etching, cladding and insulation deposition, and electrode metallization on LN/SiO₂/Si wafers.
Functions
Spot-size conversion, switching, phase modulation, power splitting and coupling, microring and Mach–Zehnder modulation, adiabatic and grating coupling.
Devices
High-speed modulators, phase shifters, couplers, coherent transmitters, and integrated optical-control circuits.
Applications
Coherent optical communication, quantum photonic processors, AI optical I/O, sensing, and LiDAR.
SiPh
Silicon Photonics
CMOS-compatible integration of optical functions on silicon for compact, scalable, high-density electronic–photonic systems.
Process
Silicon-wafer preparation, waveguide fabrication, B/P/As implantation, Ge epitaxy, interlayer dielectric deposition, metal routing, passivation, and optical/RF wafer test.
Functions
Passive routing, EAM, microring and Mach–Zehnder modulation, split, mux/demux, coupling, VOA, Ge detection, and SNSPD integration.
Devices
Coherent transmitters, DWDM transceivers, integrated Tx/Rx, Ge photodetectors, and optical engines.
Applications
800G/1.6T modules, high-speed datacom, dense optical I/O, and co-packaged optics.
SiN
Silicon Nitride
An ultra-low-loss, high-power-handling platform for dense passive routing, wavelength management, interconnection, and quantum interference.
Process
Wafer preparation, SiN deposition, waveguide patterning, upper cladding, metal routing, passivation, TSV formation, and optical/RF wafer test.
Functions
Routing, wavelength splitting, coupling, interconnect, mode conversion, edge coupling, TSV/RDL, delay lines, and adiabatic coupling.
Devices
Wafer-level photonic interposers and low-loss quantum photonic circuits.
Applications
Co-packaged optics, external-laser distribution, quantum routing and interference, and measurement-based quantum computing.
Platform selection matrix
Each platform carries a distinct part of the system. Heterogeneous integration combines active modulation, nonlinear generation, passive routing, detection, and dense optical I/O.
| Platform | Primary strength | Representative devices | Best-fit systems |
|---|---|---|---|
| LN | Stable electro-optic control | MIOC, IQ and phase modulators | FOG, LiDAR, coherent links |
| ELN™ | Enhanced field interaction | High-speed modulators, coherent transmitter | Broadband links, heterogeneous PICs |
| PPLN | Nonlinear conversion | SHG, OPA, SPDC sources | Quantum light and wavelength conversion |
| TFLN | Compact high-speed modulation | MZM, ring modulator, switches | AI, coherent communication, quantum control |
| SiPh | Dense CMOS-compatible integration | Tx/Rx, Ge PD, DWDM engine | Datacom, optical I/O, CPO |
| SiN | Ultra-low-loss passive routing | Interposer, delay line, filters | CPO and quantum circuits |